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PMPB20UN,115

NXP USA Inc.
PMPB20UN,115 Preview
NXP USA Inc.
MOSFET N-CH 20V 6.6A 6DFN
$0.06
Available to order
Reference Price (USD)
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500+
$0.0594
1000+
$0.0588
1500+
$0.0582
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$0.0576
2500+
$0.057
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 6.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-DFN2020MD (2x2)
  • Package / Case: 6-UDFN Exposed Pad

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