PMPB215ENEAX
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 80V 1.9A DFN2020MD-6
$0.55
Available to order
Reference Price (USD)
3,000+
$0.16809
6,000+
$0.15914
15,000+
$0.15018
30,000+
$0.13944
75,000+
$0.13496
Exquisite packaging
Discount
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Optimize your power electronics with the PMPB215ENEAX single MOSFET from Nexperia USA Inc.. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the PMPB215ENEAX combines cutting-edge technology with Nexperia USA Inc.'s renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 230mOhm @ 1.9A, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN2020MD-6
- Package / Case: 6-UDFN Exposed Pad
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