PMPB27EPAX
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET P-CH 30V 6.1A DFN2020MD-6
$0.17
Available to order
Reference Price (USD)
3,000+
$0.15159
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the PMPB27EPAX single MOSFET from Nexperia USA Inc.. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Nexperia USA Inc.'s PMPB27EPAX for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 29mOhm @ 6.1A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN2020MD-6
- Package / Case: 6-UDFN Exposed Pad
Related Products
onsemi
HUF75345S3ST
onsemi
FQD12P10TM-F085
Infineon Technologies
IRF2805PBF
IXYS
IXFR26N120P
STMicroelectronics
STF33N60M2
Diodes Incorporated
ZVP3310A
Nexperia USA Inc.
PMPB14XNX
Vishay Siliconix
SIHW73N60E-GE3
Diodes Incorporated
DMN2022UFDF-7
Panjit International Inc.