Shopping cart

Subtotal: $0.00

PMPB95ENEAX

Nexperia USA Inc.
PMPB95ENEAX Preview
Nexperia USA Inc.
MOSFET N-CH 80V 2.8A DFN2020MD-6
$0.48
Available to order
Reference Price (USD)
3,000+
$0.19257
6,000+
$0.18173
15,000+
$0.17090
30,000+
$0.16331
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 105mOhm @ 2.8A, 10V
  • Vgs(th) (Max) @ Id: 2.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 504 pF @ 40 V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN2020MD-6
  • Package / Case: 6-UDFN Exposed Pad

Related Products

Diotec Semiconductor

MMFTN6001

STMicroelectronics

STB13N60M2

Vishay Siliconix

SI4401BDY-T1-GE3

Rohm Semiconductor

RD3P175SNTL1

Nexperia USA Inc.

BUK9Y11-80EX

Alpha & Omega Semiconductor Inc.

AON7404

Microchip Technology

TP5322N8-G

Infineon Technologies

IRLR3410TRLPBF

Vishay Siliconix

SIR184DP-T1-RE3

Infineon Technologies

IRF3710STRRPBF

Top