PMST5088,115
NXP USA Inc.
NXP USA Inc.
NOW NEXPERIA PMST5088 - SMALL SI
$0.02
Available to order
Reference Price (USD)
3,000+
$0.03111
Exquisite packaging
Discount
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Experience unmatched performance with the PMST5088,115 Bipolar Junction Transistor (BJT) by NXP USA Inc.. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the PMST5088,115 delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose NXP USA Inc. for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100µA, 5V
- Power - Max: 200 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
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