PMV120ENEAR
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 60V 2.1A TO236AB
$0.42
Available to order
Reference Price (USD)
3,000+
$0.15694
6,000+
$0.14858
15,000+
$0.14022
30,000+
$0.13019
75,000+
$0.12601
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PMV120ENEAR from Nexperia USA Inc. sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Nexperia USA Inc.'s PMV120ENEAR for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 123mOhm @ 2.1A, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 513mW (Ta), 6.4W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Nexperia USA Inc.