PMV130ENEA,215
Nexperia USA Inc.
Nexperia USA Inc.
SMALL SIGNAL FIELD-EFFECT TRANSI
$0.05
Available to order
Reference Price (USD)
1+
$0.05000
500+
$0.0495
1000+
$0.049
1500+
$0.0485
2000+
$0.048
2500+
$0.0475
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience unmatched performance with the PMV130ENEA,215 Bipolar Junction Transistor (BJT) by Nexperia USA Inc.. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the PMV130ENEA,215 delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Nexperia USA Inc. for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
onsemi
PZTA42T1G
Fairchild Semiconductor
TN6717A
Microchip Technology
JANTXV2N930
NXP USA Inc.
PUMH13/ZL115
Diodes Incorporated
2DA1971Q-7
Nexperia USA Inc.
BC807-40,235
onsemi
2N3773G
Infineon Technologies
PZTA42H6327XTSA1
Infineon Technologies
SMBTA56E6327HTSA1
Microchip Technology