PMV160UP,215
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET P-CH 20V 1.2A TO236AB
$0.43
Available to order
Reference Price (USD)
3,000+
$0.07784
6,000+
$0.07085
15,000+
$0.06386
30,000+
$0.06036
75,000+
$0.05442
150,000+
$0.05267
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the PMV160UP,215 by Nexperia USA Inc., a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the PMV160UP,215 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 210mOhm @ 1.2A, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 335mW (Ta), 2.17W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Fairchild Semiconductor
FDS6679Z
Infineon Technologies
IPL60R185P7AUMA1
Infineon Technologies
SPW15N60C3FKSA1
Fairchild Semiconductor
HUFA76437S3ST
NXP Semiconductors
PMZB950UPEL315
Fairchild Semiconductor
FQI6N60CTU
Rohm Semiconductor
R6004CNDTL
onsemi
NTD5862NT4G
Infineon Technologies
IRFSL7787PBF
UnitedSiC