PMV27UPER
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET P-CH 20V 4.5A TO236AB
$0.47
Available to order
Reference Price (USD)
3,000+
$0.15384
6,000+
$0.14565
15,000+
$0.13745
30,000+
$0.12762
75,000+
$0.12352
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the PMV27UPER by Nexperia USA Inc., a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the PMV27UPER is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 32mOhm @ 4.5A, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22.1 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 490mW (Ta), 4.15W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Toshiba Semiconductor and Storage
TPH1R306PL1,LQ
Microchip Technology
TP5335K1-G
Vishay Siliconix
SI7317DN-T1-GE3
Nexperia USA Inc.
PMPB11EN,115
onsemi
NVMFS6H864NLT1G
Infineon Technologies
IPD60R2K0C6ATMA1
IXYS
IXFB300N10P
Renesas Electronics America Inc
BB503CCS-TL-H
GeneSiC Semiconductor
G3R160MT12J
Rohm Semiconductor