Shopping cart

Subtotal: $0.00

PMXB43UNEZ

Nexperia USA Inc.
PMXB43UNEZ Preview
Nexperia USA Inc.
MOSFET N-CH 20V 3.2A DFN1010D-3
$0.49
Available to order
Reference Price (USD)
5,000+
$0.17159
10,000+
$0.16136
25,000+
$0.15419
50,000+
$0.15345
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 54mOhm @ 3.2A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 551 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN1010D-3
  • Package / Case: 3-XDFN Exposed Pad

Related Products

Vishay Siliconix

SIS890DN-T1-GE3

Vishay Siliconix

SI2304DDS-T1-BE3

Panjit International Inc.

PJD14P10A_L2_00001

Alpha & Omega Semiconductor Inc.

AON7428

Diotec Semiconductor

MMFTN3018W

Alpha & Omega Semiconductor Inc.

AOD600A60

Infineon Technologies

IRFS7530TRLPBF

Toshiba Semiconductor and Storage

SSM6K202FE,LF

Infineon Technologies

SPU07N60S5

Top