PMXB65UPEZ
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET P-CH 12V 3.2A DFN1010D-3
$0.50
Available to order
Reference Price (USD)
5,000+
$0.08920
10,000+
$0.08040
25,000+
$0.07600
50,000+
$0.06852
125,000+
$0.06632
Exquisite packaging
Discount
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Optimize your power electronics with the PMXB65UPEZ single MOSFET from Nexperia USA Inc.. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the PMXB65UPEZ combines cutting-edge technology with Nexperia USA Inc.'s renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs: 72mOhm @ 3.2A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 317mW (Ta), 8.33W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN1010D-3
- Package / Case: 3-XDFN Exposed Pad
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