Shopping cart

Subtotal: $0.00

PMZ1200UPEYL

Nexperia USA Inc.
PMZ1200UPEYL Preview
Nexperia USA Inc.
MOSFET P-CH 30V 410MA DFN1006-3
$0.46
Available to order
Reference Price (USD)
10,000+
$0.05579
30,000+
$0.05231
50,000+
$0.04638
100,000+
$0.04533
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 410mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 1.4Ohm @ 410mA, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 43.2 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-883
  • Package / Case: SC-101, SOT-883

Related Products

Vishay Siliconix

SQJ486EP-T1_GE3

Rohm Semiconductor

R6520KNZ4C13

Renesas Electronics America Inc

NP22N055HLE-S16-AY

Microchip Technology

MSC015SMA070S

Nexperia USA Inc.

PMN48XPA,115

Vishay Siliconix

SIHP35N60EF-GE3

Vishay Siliconix

IRFU210PBF

Toshiba Semiconductor and Storage

SSM3K09FU,LF

Top