PMZ600UNEYL
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 20V 600MA DFN1006-3
$0.37
Available to order
Reference Price (USD)
10,000+
$0.07568
30,000+
$0.07095
50,000+
$0.06291
100,000+
$0.06149
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the PMZ600UNEYL single MOSFET from Nexperia USA Inc.. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Nexperia USA Inc.'s PMZ600UNEYL for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 21.3 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-883
- Package / Case: SC-101, SOT-883
Related Products
Vishay Siliconix
SI7629DN-T1-GE3
Infineon Technologies
IRFR48ZTRPBF
Diodes Incorporated
DMNH4005SCT
STMicroelectronics
STW56N65M2
Vishay Siliconix
IRFZ48RSPBF
IXYS
IXFK170N10P
Fairchild Semiconductor
FQB6N90TM
Infineon Technologies
IRLL024ZTRPBF
Nexperia USA Inc.
PMPB20EN,115
STMicroelectronics