PMZB380XN,315
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 30V 930MA DFN1006B-3
$0.09
Available to order
Reference Price (USD)
1+
$0.09000
500+
$0.0891
1000+
$0.0882
1500+
$0.0873
2000+
$0.0864
2500+
$0.0855
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PMZB380XN,315 by NXP USA Inc. is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose NXP USA Inc. for innovation you can depend on.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 930mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN1006B-3
- Package / Case: SC-101, SOT-883
Related Products
Vishay Siliconix
SI7615DN-T1-GE3
Alpha & Omega Semiconductor Inc.
AON7510
Diodes Incorporated
DMG4712SSS-13
Vishay Siliconix
IRFD9210PBF
IXYS
IXTP1R4N100P
IXYS
IXTK20N150
Diodes Incorporated
DMP2036UVT-7
Rectron USA
RM40N200TI
IXYS
IXFH230N10T
Rohm Semiconductor