PMZB550UNEYL
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 30V 590MA DFN1006B-3
$0.50
Available to order
Reference Price (USD)
10,000+
$0.07176
30,000+
$0.06783
50,000+
$0.06115
100,000+
$0.05998
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PMZB550UNEYL from Nexperia USA Inc. sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Nexperia USA Inc.'s PMZB550UNEYL for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 590mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 30.3 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN1006B-3
- Package / Case: 3-XFDFN
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