PSMN0R9-25YLDX
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 25V 300A LFPAK56
$2.52
Available to order
Reference Price (USD)
1,500+
$0.79002
3,000+
$0.73735
7,500+
$0.70048
10,500+
$0.67415
Exquisite packaging
Discount
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Upgrade your designs with the PSMN0R9-25YLDX by Nexperia USA Inc., a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the PSMN0R9-25YLDX is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 0.85mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 89.8 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6721 pF @ 12 V
- FET Feature: -
- Power Dissipation (Max): 238W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
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