PSMN1R0-30YLDX
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
$2.15
Available to order
Reference Price (USD)
1,500+
$0.63756
3,000+
$0.59506
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the PSMN1R0-30YLDX by Nexperia USA Inc., a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The PSMN1R0-30YLDX stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Nexperia USA Inc..
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.02mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 121.35 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8598 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 238W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
Related Products
Nexperia USA Inc.
PMF370XN,115
Vishay Siliconix
SIHB24N65E-GE3
STMicroelectronics
STP50NF25
onsemi
NTMYS5D3N04CTWG
Infineon Technologies
IRFS3107TRL7PP
Taiwan Semiconductor Corporation
TSM60NB041PW C1G
Rohm Semiconductor
RW1C026ZPT2CR
onsemi
NTP75N03RG
NXP USA Inc.
BUK662R7-55C,118
Fairchild Semiconductor