PSMN1R1-30EL,127
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 30V 120A I2PAK
$0.90
Available to order
Reference Price (USD)
1+
$2.79000
50+
$2.24740
100+
$2.02260
500+
$1.57312
1,000+
$1.30343
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PSMN1R1-30EL,127 from Nexperia USA Inc. sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Nexperia USA Inc.'s PSMN1R1-30EL,127 for their critical applications.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 338W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
onsemi
FCPF250N65S3L1-F154
Infineon Technologies
IRFS3306TRLPBF
Microchip Technology
APT6038SLLG
Fairchild Semiconductor
FDS3170N7
Vishay Siliconix
SI2329DS-T1-GE3
IXYS
IXFA16N50P
Infineon Technologies
IAUC100N04S6N028ATMA1
Vishay Siliconix
SI2342DS-T1-GE3
Alpha & Omega Semiconductor Inc.
AOB600A60L
Diodes Incorporated