PSMN1R2-30YLC,115
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
$1.63
Available to order
Reference Price (USD)
1,500+
$0.46200
3,000+
$0.43120
7,500+
$0.40964
10,500+
$0.39424
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the PSMN1R2-30YLC,115 single MOSFET from Nexperia USA Inc.. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the PSMN1R2-30YLC,115 combines cutting-edge technology with Nexperia USA Inc.'s renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.25mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 1.95V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5093 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 215W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
Related Products
onsemi
NTD3817N-35G
Panjit International Inc.
PJD85N03_L2_00001
Rohm Semiconductor
RUM002N02T2L
STMicroelectronics
STP3NK90ZFP
IXYS
IXFP5N100PM
onsemi
STD5P06VT4
Vishay Siliconix
SI4464DY-T1-GE3
Diodes Incorporated
DMNH4005SCTQ
Infineon Technologies
IPP075N15N3GXKSA1
STMicroelectronics