PSMN2R0-40YLDX
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 40V 180A LFPAK56
$1.82
Available to order
Reference Price (USD)
1+
$1.82000
500+
$1.8018
1000+
$1.7836
1500+
$1.7654
2000+
$1.7472
2500+
$1.729
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PSMN2R0-40YLDX from Nexperia USA Inc. redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the PSMN2R0-40YLDX offers the precision and reliability you need. Trust Nexperia USA Inc. to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 180A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.1mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2.05V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6581 pF @ 20 V
- FET Feature: Schottky Diode (Body)
- Power Dissipation (Max): 166W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
Related Products
Infineon Technologies
IRLHS6342TRPBF
Microchip Technology
MSC750SMA170B4
STMicroelectronics
STD16N65M5
Vishay Siliconix
SIR460DP-T1-GE3
Fairchild Semiconductor
FQP17N08
Vishay Siliconix
SQD25N06-22L_T4GE3
Diodes Incorporated
DMT6016LSS-13
Infineon Technologies
BSZ075N08NS5ATMA1
Vishay Siliconix
SQJ418EP-T1_GE3
Fairchild Semiconductor