PSMN2R8-40PS,127
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 40V 100A TO220AB
$2.90
Available to order
Reference Price (USD)
1+
$1.89000
50+
$1.52800
100+
$1.37510
500+
$1.06954
1,000+
$0.88618
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PSMN2R8-40PS,127 by Nexperia USA Inc. is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Nexperia USA Inc. for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.8mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4491 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 211W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
Rohm Semiconductor
RE1E002SPTCL
Diodes Incorporated
BSS138W-7-F
Infineon Technologies
BSO040N03MSGXUMA1
STMicroelectronics
STW12N150K5
onsemi
NTMFS5C404NLTWFT1G
Nexperia USA Inc.
BUK7Y102-100B,115
onsemi
FDP075N15A-F102
Nexperia USA Inc.
BUK6Y10-30PX
Infineon Technologies
IRFH5006TRPBF
STMicroelectronics