PSMN3R0-30MLC,115
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 30V 70A LFPAK33
$1.22
Available to order
Reference Price (USD)
1,500+
$0.37945
3,000+
$0.34388
7,500+
$0.32017
10,500+
$0.30831
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the PSMN3R0-30MLC,115 by Nexperia USA Inc., a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The PSMN3R0-30MLC,115 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Nexperia USA Inc..
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.15mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2.15V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 88W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK33
- Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Related Products
Vishay Siliconix
SIHB12N60ET5-GE3
Nexperia USA Inc.
PSMN9R0-25MLC,115
Diodes Incorporated
DMPH4013SK3Q-13
Vishay Siliconix
SIHG11N80E-GE3
onsemi
NVMS5P02R2G
Infineon Technologies
IPC100N04S52R8ATMA1
Infineon Technologies
AUIRF4905STRL
Infineon Technologies
IAUZ30N10S5L240ATMA1
Toshiba Semiconductor and Storage
TK12A45D(STA4,Q,M)
Vishay Siliconix