PSMN3R3-80ES,127
NXP USA Inc.
NXP USA Inc.
ELEMENT, NCHANNEL, SILICON, MOSF
$1.35
Available to order
Reference Price (USD)
1,000+
$1.84122
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the PSMN3R3-80ES,127 from NXP USA Inc., a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the PSMN3R3-80ES,127 ensures reliable performance in demanding environments. Upgrade your circuit designs with NXP USA Inc.'s cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 9961 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 338W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
Toshiba Semiconductor and Storage
TK35A65W,S5X
Vishay Siliconix
SI5471DC-T1-GE3
Microchip Technology
APT18M80B
IXYS
IXTT60N20L2
Rohm Semiconductor
RCJ081N20TL
Motorola
NTD4N60T4
Fairchild Semiconductor
IRFS720B
onsemi
FQD5P10TM
onsemi
FDB9503L-F085
Diodes Incorporated