PSMN3R7-25YLC,115
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 25V 97A LFPAK56
$0.21
Available to order
Reference Price (USD)
1+
$0.21000
500+
$0.2079
1000+
$0.2058
1500+
$0.2037
2000+
$0.2016
2500+
$0.1995
Exquisite packaging
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Meet the PSMN3R7-25YLC,115 by NXP USA Inc., a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The PSMN3R7-25YLC,115 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose NXP USA Inc..
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 1.95V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 21.6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 12 V
- FET Feature: -
- Power Dissipation (Max): 64W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
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