PSMN3R8-100BS,118
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 100V 120A D2PAK
$3.98
Available to order
Reference Price (USD)
800+
$1.77375
1,600+
$1.65550
2,400+
$1.57273
5,600+
$1.51360
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PSMN3R8-100BS,118 from Nexperia USA Inc. sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Nexperia USA Inc.'s PSMN3R8-100BS,118 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 306W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
STMicroelectronics
STFI4N62K3
onsemi
2SK3709
onsemi
NIF9N05CLT3G
Vishay Siliconix
IRF9Z24PBF
Vishay Siliconix
SISA88DN-T1-GE3
STMicroelectronics
STN4NF03L
Microchip Technology
APT13F120S
STMicroelectronics
STB30N65M2AG
onsemi
NTHS2101PT1
IXYS