PSMN8R0-80YLX
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 80V 100A LFPAK56
$0.91
Available to order
Reference Price (USD)
1,500+
$0.50886
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the PSMN8R0-80YLX from Nexperia USA Inc., a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the PSMN8R0-80YLX ensures reliable performance in demanding environments. Upgrade your circuit designs with Nexperia USA Inc.'s cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8167 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 238W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
Related Products
Toshiba Semiconductor and Storage
TK19A45D(STA4,Q,M)
Infineon Technologies
IPWS65R075CFD7AXKSA1
Infineon Technologies
IPW60R099C7XKSA1
Renesas Electronics America Inc
UPA1816GR-9JG-E1-A
onsemi
FDS6575
onsemi
FDD6670A
Fairchild Semiconductor
HUF76129S3S
Diodes Incorporated
ZVP4424ASTZ
Infineon Technologies
SPA11N80C3XKSA1
Sanken