PUMD9,135
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS 1NPN 1PNP 6TSSOP
$0.04
Available to order
Reference Price (USD)
1+
$0.03820
500+
$0.037818
1000+
$0.037436
1500+
$0.037054
2000+
$0.036672
2500+
$0.03629
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with the PUMD9,135 by Nexperia USA Inc., a pre-biased BJT array engineered for efficiency and durability. This discrete semiconductor product features matched transistors with built-in bias resistors, simplifying circuit design and reducing component count. Perfect for space-constrained applications, the PUMD9,135 excels in automotive systems, power management modules, and communication devices. Nexperia USA Inc.'s commitment to quality ensures that each transistor array meets stringent performance standards, providing stable operation across a wide temperature range. Choose PUMD9,135 for superior signal processing and energy-efficient performance.
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
Related Products
Nexperia USA Inc.
PUMH2,115
Nexperia USA Inc.
PBLS1504Y,115
Nexperia USA Inc.
PUMH20,115
Rohm Semiconductor
EMB60T2R
Toshiba Semiconductor and Storage
RN4991FE,LXHF(CT
Nexperia USA Inc.
NHUMD13F
Nexperia USA Inc.
PUMD10,135
Rohm Semiconductor
FMA7AT148
Rohm Semiconductor
UMD9NTR
Toshiba Semiconductor and Storage