PUMF12,115
NXP USA Inc.
NXP USA Inc.
NOW NEXPERIA PUMF12 - SC-88
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Upgrade your electronic designs with the PUMF12,115 by NXP USA Inc., a pre-biased BJT array engineered for efficiency and durability. This discrete semiconductor product features matched transistors with built-in bias resistors, simplifying circuit design and reducing component count. Perfect for space-constrained applications, the PUMF12,115 excels in automotive systems, power management modules, and communication devices. NXP USA Inc.'s commitment to quality ensures that each transistor array meets stringent performance standards, providing stable operation across a wide temperature range. Choose PUMF12,115 for superior signal processing and energy-efficient performance.
Specifications
- Product Status: Active
- Transistor Type: 1 NPN Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V, 40V
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V / 120 @ 1mA, 6V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 100MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
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