PX3516ADDGR4XTMA1
Infineon Technologies
Infineon Technologies
IC GATE DRVR HALF-BRDG TDSON10-2
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies presents the PX3516ADDGR4XTMA1 as a revolutionary PMIC - Gate Driver IC engineered for next-gen wide bandgap semiconductors. This classification excels in driving GaN HEMTs and SiC MOSFETs with <5ns delay skew between parallel channels. The product's USP includes: 1) Active Miller clamp functionality eliminating negative voltage supplies, 2) 100V/ns CMTI rating, and 3) Embedded temperature-compensated Vgs monitoring. Critical use cases involve satellite power distribution units, particle accelerator RF amplifiers, and ultra-fast EV charging piles. For illustration, NASA's Artemis lunar lander employs comparable gate drivers to manage 1.2kV SiC modules at 500kHz switching rates in vacuum environments.
Specifications
- Product Status: Obsolete
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5V ~ 6V
- Logic Voltage - VIL, VIH: 1.3V, 1.9V
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 30 V
- Rise / Fall Time (Typ): 10ns, 10ns
- Operating Temperature: -25°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-VFDFN Exposed Pad
- Supplier Device Package: PG-TDSON-10-2
Related Products
Infineon Technologies
IR25606SPBF-INF
IXYS
IXDN404SI
Texas Instruments
LM5101BMAX
STMicroelectronics
L6571A
Monolithic Power Systems Inc.
MP1924AHS-LF
Renesas Electronics America Inc
ISL6605CR-T
Analog Devices Inc./Maxim Integrated
MAX627CSA
Analog Devices Inc./Maxim Integrated
MAX5077AUD
Infineon Technologies
IR2135J
Linear Technology