PXP9R1-30QLJ
Nexperia USA Inc.
Nexperia USA Inc.
PXP9R1-30QL/SOT8002/MLPAK33
$0.74
Available to order
Reference Price (USD)
1+
$0.74000
500+
$0.7326
1000+
$0.7252
1500+
$0.7178
2000+
$0.7104
2500+
$0.703
Exquisite packaging
Discount
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Enhance your electronic projects with the PXP9R1-30QLJ single MOSFET from Nexperia USA Inc.. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Nexperia USA Inc.'s PXP9R1-30QLJ for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 57.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 9.1mOhm @ 10.8A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 50W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: MLPAK33
- Package / Case: 8-PowerVDFN
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Nexperia USA Inc.