QS5Y2FSTR
Rohm Semiconductor

Rohm Semiconductor
PNP+NPN DRIVER TRANSISTOR. DEVI
$0.66
Available to order
Reference Price (USD)
1+
$0.66000
500+
$0.6534
1000+
$0.6468
1500+
$0.6402
2000+
$0.6336
2500+
$0.627
Exquisite packaging
Discount
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Precision meets power in the QS5Y2FSTR BJT Array by Rohm Semiconductor. Specifically engineered for Class-B audio amplifiers and active filters, this Discrete Semiconductor Product delivers THD<0.1% for studio-grade sound reproduction. Telecommunications infrastructure and test equipment manufacturers rely on its stable beta characteristics across temperature ranges. The QS5Y2FSTR comes with anti-oxidation terminals, ensuring solderability even after prolonged storage.
Specifications
- Product Status: Active
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A, 400mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V
- Power - Max: 500mW
- Frequency - Transition: 320MHz, 300MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-5 Thin, TSOT-23-5
- Supplier Device Package: TSMT5