R1LV0816ASB-7SI#S0
Renesas Electronics America Inc
Renesas Electronics America Inc
IC SRAM 8MBIT PARALLEL 44TSOP II
$24.28
Available to order
Reference Price (USD)
1+
$24.28000
500+
$24.0372
1000+
$23.7944
1500+
$23.5516
2000+
$23.3088
2500+
$23.066
Exquisite packaging
Discount
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Experience top-tier performance with the R1LV0816ASB-7SI#S0 Memory IC from Renesas Electronics America Inc, a standout in the Memory category. This IC is designed to deliver high-speed data access and substantial storage capacity, meeting the requirements of advanced electronic systems. Its innovative architecture ensures efficiency and reliability.
The R1LV0816ASB-7SI#S0 exemplifies the key characteristics of Memory ICs: high reliability, fast data transfer, and compact form factors. These ICs are crucial for devices that require instant data retrieval and storage, such as smartphones and embedded systems. The R1LV0816ASB-7SI#S0 provides these benefits while maintaining low power consumption and thermal efficiency.
This Memory IC is widely used in applications like networking equipment, IoT devices, and automotive electronics. For example, it is integral to routers and switches that manage high volumes of data traffic. It also plays a vital role in smart home devices, enabling seamless operation. The R1LV0816ASB-7SI#S0 is a superior choice for high-performance Memory ICs.
Specifications
- Product Status: Obsolete
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM
- Memory Size: 8Mb (512K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 70ns
- Access Time: 70 ns
- Voltage - Supply: 2.4V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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