R1RW0408DGE-2PR#B1
Renesas Electronics America Inc

Renesas Electronics America Inc
IC SRAM 4MBIT PARALLEL 36SOJ
$16.03
Available to order
Reference Price (USD)
1+
$16.03200
500+
$15.87168
1000+
$15.71136
1500+
$15.55104
2000+
$15.39072
2500+
$15.2304
Exquisite packaging
Discount
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Optimize your electronic designs with the R1RW0408DGE-2PR#B1 Memory IC from Renesas Electronics America Inc, a leading component in the Memory category. This IC offers unparalleled data storage and access speeds, making it a must-have for high-performance systems. Its innovative architecture ensures efficiency and reliability in diverse operating conditions.
The R1RW0408DGE-2PR#B1 embodies the essential features of Memory ICs: high capacity, fast operation, and low power consumption. These ICs are pivotal in devices that require rapid data processing, such as digital cameras and communication modules. The R1RW0408DGE-2PR#B1 excels in these areas, providing consistent and dependable performance.
This Memory IC is extensively used in fields like robotics, industrial control systems, and consumer gadgets. For example, it is a key component in robotic arms that require precise and quick data handling. It also enhances the functionality of smart appliances by enabling efficient memory operations. The R1RW0408DGE-2PR#B1 is a top-tier choice for Memory ICs in various industries.
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM
- Memory Size: 4Mb (512K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 12ns
- Access Time: 12 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 36-BSOJ (0.400", 10.16mm Width)
- Supplier Device Package: 36-SOJ