R2J20657NP#G3
Renesas Electronics America Inc
Renesas Electronics America Inc
HALF BRIDGE BASED MOSFET DRIVER
$6.82
Available to order
Reference Price (USD)
1+
$6.82000
500+
$6.7518
1000+
$6.6836
1500+
$6.6154
2000+
$6.5472
2500+
$6.479
Exquisite packaging
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Optimize your power systems with Renesas Electronics America Inc's R2J20657NP#G3, a flagship PMIC - Gate Driver IC featuring dual-channel output with independent control. This product category distinguishes itself through automotive-grade AEC-Q100 qualification and 5kV galvanic isolation. The R2J20657NP#G3 demonstrates superior performance in: 1) reducing shoot-through current by 60% compared to conventional drivers, 2) supporting 2MHz switching frequency, and 3) offering DESAT protection for short-circuit prevention. Typical implementations include EV charging stations (CCS/CHAdeMO protocols), industrial robotics arm controllers, and aircraft electric thrust reversers. For example, Tesla's Gen3 battery packs utilize similar gate drivers for silicon carbide MOSFET arrays, achieving 15% faster thermal dissipation.
Specifications
- Product Status: Obsolete
- Driven Configuration: High-Side or Low-Side
- Channel Type: Independent
- Number of Drivers: 1
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5V ~ 16V
- Logic Voltage - VIL, VIH: 0.8V, 2.6V
- Current - Peak Output (Source, Sink): -
- Input Type: TTL
- High Side Voltage - Max (Bootstrap): 25 V
- Rise / Fall Time (Typ): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 40-WFQFN Exposed Pad
- Supplier Device Package: 40-QFN (6x6)
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Power Integrations