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R5009ANX

Rohm Semiconductor
R5009ANX Preview
Rohm Semiconductor
MOSFET N-CH 500V 9A TO220
$1.63
Available to order
Reference Price (USD)
1+
$1.49000
10+
$1.32800
100+
$1.03500
500+
$0.85500
1,000+
$0.67500
2,500+
$0.63000
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 720mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack

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