R6002END3TL1
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 600V 1.7A TO252
$1.15
Available to order
Reference Price (USD)
2,500+
$0.38640
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the R6002END3TL1 single MOSFET from Rohm Semiconductor. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Rohm Semiconductor's R6002END3TL1 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 26W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
onsemi
NTMFS4985NFT3G
IXYS
IXTA150N15X4
Alpha & Omega Semiconductor Inc.
AOB11S65L
Vishay Siliconix
SI4465ADY-T1-E3
Diodes Incorporated
DMN61D9UW-7
onsemi
NVMFS5C404NLAFT3G
Rectron USA
RM180N60T2
onsemi
NTD4969N-1G
Nexperia USA Inc.
PMCM6501UPEZ
Rohm Semiconductor