R6511KND3TL1
Rohm Semiconductor
Rohm Semiconductor
HIGH-SPEED SWITCHING, NCH 650V 1
$2.40
Available to order
Reference Price (USD)
1+
$2.40000
500+
$2.376
1000+
$2.352
1500+
$2.328
2000+
$2.304
2500+
$2.28
Exquisite packaging
Discount
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The R6511KND3TL1 by Rohm Semiconductor is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the R6511KND3TL1 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id: 5V @ 320µA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 124W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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