R6547ENZ4C13
Rohm Semiconductor
Rohm Semiconductor
650V 47A TO-247, LOW-NOISE POWER
$9.92
Available to order
Reference Price (USD)
1+
$9.92000
500+
$9.8208
1000+
$9.7216
1500+
$9.6224
2000+
$9.5232
2500+
$9.424
Exquisite packaging
Discount
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Optimize your power electronics with the R6547ENZ4C13 single MOSFET from Rohm Semiconductor. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the R6547ENZ4C13 combines cutting-edge technology with Rohm Semiconductor's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 80mOhm @ 25.8A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1.72mA
- Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 480W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247G
- Package / Case: TO-247-3
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