R8002ANX
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 800V 2A TO220FM
$3.08
Available to order
Reference Price (USD)
1+
$2.71000
10+
$2.43800
100+
$1.95960
500+
$1.61000
1,000+
$1.33400
2,500+
$1.28800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The R8002ANX by Rohm Semiconductor is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the R8002ANX is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
Related Products
Infineon Technologies
IPL65R210CFDAUMA2
onsemi
NTMFS5C646NLT3G
onsemi
NTLJF4156NTAG
Linear Integrated Systems, Inc.
SST213 SOT-143 4L
onsemi
NVMFS6H848NLT1G
Diodes Incorporated
ZXMN3A03E6TA
onsemi
2SK4065-DL-1EX
Nexperia USA Inc.
2N7002HR
Vishay Siliconix
SIR474DP-T1-GE3
Rohm Semiconductor