R8002CND3FRATL
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 800V 2A TO252
$2.97
Available to order
Reference Price (USD)
1+
$2.97000
500+
$2.9403
1000+
$2.9106
1500+
$2.8809
2000+
$2.8512
2500+
$2.8215
Exquisite packaging
Discount
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The R8002CND3FRATL by Rohm Semiconductor is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the R8002CND3FRATL is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id: 5.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 69W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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