RBA250N04AHPF-4UA01#GB0
Renesas Electronics America Inc
Renesas Electronics America Inc
POWER TRS2 AUTOMOTIVE MOS MP-25L
$4.89
Available to order
Reference Price (USD)
1+
$4.89000
500+
$4.8411
1000+
$4.7922
1500+
$4.7433
2000+
$4.6944
2500+
$4.6455
Exquisite packaging
Discount
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The RBA250N04AHPF-4UA01#GB0 from Renesas Electronics America Inc sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Renesas Electronics America Inc's RBA250N04AHPF-4UA01#GB0 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 0.85mOhm @ 125A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 368 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 19350 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
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