RBR10BGE30ATL
Rohm Semiconductor
Rohm Semiconductor
30V, 10A, TO-252, CATHODE COMMON
$1.57
Available to order
Reference Price (USD)
1+
$1.57000
500+
$1.5543
1000+
$1.5386
1500+
$1.5229
2000+
$1.5072
2500+
$1.4915
Exquisite packaging
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The RBR10BGE30ATL from Rohm Semiconductor sets new benchmarks in the Discrete Semiconductor Products market. This rectifier array incorporates advanced epitaxial growth technology for superior reverse recovery characteristics. Perfect for high-efficiency adapters, induction heating, and plasma cutting equipment, it offers outstanding thermal cycling performance. Rohm Semiconductor's rigorous quality control ensures the RBR10BGE30ATL maintains consistent parameters across production batches for design-in reliability.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 30 V
- Operating Temperature - Junction: 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252GE
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