RF1S23N06LESM
Harris Corporation
Harris Corporation
N-CHANNEL POWER MOSFET
$0.59
Available to order
Reference Price (USD)
1+
$0.59000
500+
$0.5841
1000+
$0.5782
1500+
$0.5723
2000+
$0.5664
2500+
$0.5605
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RF1S23N06LESM from Harris Corporation sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Harris Corporation's RF1S23N06LESM for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 23A
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263AB
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
onsemi
FDFMA2P029Z-F106
PN Junction Semiconductor
P3M171K0K3
IXYS
IXTA1R4N120P-TRL
Fairchild Semiconductor
FDS7064N
Infineon Technologies
IPB90N06S404ATMA2
Infineon Technologies
IPD65R1K4CFDATMA1
Infineon Technologies
IPA60R360CFD7XKSA1
Microchip Technology
APT20M34BLLG
Fairchild Semiconductor
HUFA76619D3ST
Fairchild Semiconductor