Shopping cart

Subtotal: $0.00

RGL41DHE3/96

Vishay General Semiconductor - Diodes Division
RGL41DHE3/96 Preview
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO213AB
$0.14
Available to order
Reference Price (USD)
6,000+
$0.15005
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF (Glass)
  • Supplier Device Package: DO-213AB
  • Operating Temperature - Junction: -65°C ~ 175°C

Related Products

Solid State Inc.

40HF100

Vishay General Semiconductor - Diodes Division

VS-20ETF08STRR-M3

Vishay General Semiconductor - Diodes Division

VB20100S-E3/4W

Microchip Technology

JANS1N5291UR-1/TR

Microchip Technology

JAN1N6623/TR

NTE Electronics, Inc

NTE507

Vishay General Semiconductor - Diodes Division

EGL34D-E3/98

Taiwan Semiconductor Corporation

S1MFS MWG

Vishay General Semiconductor - Diodes Division

MCL4448-TR

Top