RGT16TM65DGC9
Rohm Semiconductor
Rohm Semiconductor
FIELD STOP TRENCH IGBT
$2.68
Available to order
Reference Price (USD)
1+
$2.68000
500+
$2.6532
1000+
$2.6264
1500+
$2.5996
2000+
$2.5728
2500+
$2.546
Exquisite packaging
Discount
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Enhance your electronic projects with the RGT16TM65DGC9 Single IGBT transistor from Rohm Semiconductor. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the RGT16TM65DGC9 ensures precision and reliability. Rohm Semiconductor's cutting-edge technology guarantees a component that meets the highest industry standards. Choose RGT16TM65DGC9 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 9 A
- Current - Collector Pulsed (Icm): 24 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
- Power - Max: 22 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 21 nC
- Td (on/off) @ 25°C: 13ns/33ns
- Test Condition: 400V, 8A, 10Ohm, 15V
- Reverse Recovery Time (trr): 42 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NFM
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