RJK0328DPB-01#J0
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 30V 60A LFPAK
$1.49
Available to order
Reference Price (USD)
1+
$1.48630
500+
$1.471437
1000+
$1.456574
1500+
$1.441711
2000+
$1.426848
2500+
$1.411985
Exquisite packaging
Discount
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The RJK0328DPB-01#J0 by Renesas Electronics America Inc is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Renesas Electronics America Inc for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6380 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 65W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK
- Package / Case: SC-100, SOT-669
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