RJK0329DPB-01#J0
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 30V 55A LFPAK
$0.97
Available to order
Reference Price (USD)
1+
$0.97000
500+
$0.9603
1000+
$0.9506
1500+
$0.9409
2000+
$0.9312
2500+
$0.9215
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RJK0329DPB-01#J0 by Renesas Electronics America Inc is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the RJK0329DPB-01#J0 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 2.3mOhm @ 27.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK
- Package / Case: SC-100, SOT-669
Related Products
IXYS
IXFX52N100X
Vishay Siliconix
SIRA90DP-T1-RE3
Vishay Siliconix
SI2323CDS-T1-GE3
onsemi
FDC3612
Infineon Technologies
IPDD60R125G7XTMA1
STMicroelectronics
STP5NK52ZD
Nexperia USA Inc.
PMPB20XNEAX
onsemi
IRF530A
Infineon Technologies
SPI15N60CFD
Alpha & Omega Semiconductor Inc.