RJK0653DPB-00#J5
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 60V 45A LFPAK
$1.42
Available to order
Reference Price (USD)
1+
$1.41950
500+
$1.405305
1000+
$1.39111
1500+
$1.376915
2000+
$1.36272
2500+
$1.348525
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the RJK0653DPB-00#J5 by Renesas Electronics America Inc, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the RJK0653DPB-00#J5 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.8mOhm @ 22.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 65W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK
- Package / Case: SC-100, SOT-669
Related Products
Infineon Technologies
IPP80N06S2L06AKSA1
Vishay Siliconix
SI2307CDS-T1-BE3
Vishay Siliconix
SIHB15N65E-GE3
STMicroelectronics
STL12N60M2
Vishay Siliconix
SQJA86EP-T1_BE3
onsemi
FDMS86102LZ
Rohm Semiconductor
RMW130N03TB
Fairchild Semiconductor
FDS3682_NL
Infineon Technologies
IPA50R520CPXKSA1
IXYS