RJK1002DPN-A0#T2
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 100V 70A TO220ABA
$4.58
Available to order
Reference Price (USD)
1+
$4.58000
500+
$4.5342
1000+
$4.4884
1500+
$4.4426
2000+
$4.3968
2500+
$4.351
Exquisite packaging
Discount
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The RJK1002DPN-A0#T2 by Renesas Electronics America Inc is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the RJK1002DPN-A0#T2 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 7.6mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 150W (Ta)
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220ABA
- Package / Case: TO-220-3
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