RJK1051DPB-00#J5
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 100V 15A LFPAK
$0.84
Available to order
Reference Price (USD)
1+
$0.83500
500+
$0.82665
1000+
$0.8183
1500+
$0.80995
2000+
$0.8016
2500+
$0.79325
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RJK1051DPB-00#J5 from Renesas Electronics America Inc sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Renesas Electronics America Inc's RJK1051DPB-00#J5 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 39mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK
- Package / Case: SC-100, SOT-669
Related Products
STMicroelectronics
STP20NM50
onsemi
NTD5867NLT4G
Goford Semiconductor
GT095N10K
Vishay Siliconix
SIHP125N60EF-GE3
Infineon Technologies
IRF6636TRPBF
IXYS
IXFK240N15T2
STMicroelectronics
STD16NF06LT4
Infineon Technologies
IPD60R280PFD7SAUMA1
Fairchild Semiconductor
FCI25N60N-F102
IXYS